Integration of GaN thin films with silicon substrates by fusion bonding and laser lift-off - 源码 - 源码 - 免费下载

Integration of GaN thin films with silicon substrates by fusion bonding and laser lift-off

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资源说明：GaN thin films grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) are successfully bonded and transferred onto Si receptor substrates using fusion bonding and laser lift-off (LLO) technique. GaN/Al2O3 structures are joined to Si substrates by pressure bonding Ti/Au coated GaN surface onto Ti/Au coated Si receptor substrates at the temperature of 400 Celsius degree. KrF excimer laser with 400-mJ/cm2 energy density, 248-nm wavelength, and 30-ns pulse width is used to ir

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