Optical behavior of self-assembled high-density Ge nanoislands embedded in SiO2
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资源说明:The radio frequency magnetron sputtering method is used to prepare well-dispersed pyramidal-shaped Ge nanoislands embedded in amorphous SiO2 sublayers of various thicknesses. The estimated size and number density of Ge nanoislands in SiO2 sublayer thicknesses beyond 30 nm are approximately 15 nm and 1011 cm-2, respectively. Atomic force microscopy (AFM) reveals root mean square (RMS) roughness sensitivity as the SiO2 sublayer thickness varies from 30 to 40 nm. The formation of nanoislands with h
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